氧化层厚度对Ti/TiO2-NT/Au结构电阻开关特性的影响

2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology (USBEREIT) Pub Date : 2018-05-01 DOI:10.1109/USBEREIT.2018.8384604

I. B. Dorosheva, A. Vokhmintsev, R. Kamalov, A. O. Gryaznov, I. Weinstein

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引用次数: 5

摘要

采用钛箔阳极氧化法制备了外径为45 nm的自有序纳米二氧化钛纳米管。制备了4组直径为100 μm、氧化层厚度分别为80、120、160和200 nm的Ti/TiO2-NT/Au夹层结构忆阻器。研究了所得样品在静态和动态工作模式下的电流-电压(CV)特性。估计高电阻和低电阻状态下的电阻。通过对动态模式下(> 14000个开关)CV特性的分析，展望了氧化层厚度为160 nm的合成Ti/TiO2-NT/Au微忆阻器在非易失性存储器中的应用前景。

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Oxide layer thickness effects on the resistance switching characteristics of Ti/TiO2-NT/Au structure

Self-ordered nanotubular titania TiO2-NT with outer tube diameter of 45 nm are synthesized using the anodic oxidation of titanium foil. Four sets of memristors with 100 μm diameter based on Ti/TiO2-NT/Au sandwich structures with an oxide layer thickness of 80, 120, 160 and 200 nm are fabricated. Current-voltage (CV) characteristics for the obtained samples in the static and dynamic operation modes are studied. Resistance in high and low resistance states is estimated. Basing on the analysis of the CV characteristics in dynamic mode (> 14 000 switchings) a prospective of use for synthesized Ti/TiO2-NT/Au micromemristors with oxide layer thickness of 160 nm in non-volatile memory is shown.

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2018 Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology (USBEREIT)

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