气体探测中基于GaxIn1−x−yAsySb1−y /GaSb的应变量子阱结构的长波测定

2011 Saudi International Electronics, Communications and Photonics Conference (SIECPC) Pub Date : 2011-04-24 DOI:10.1109/SIECPC.2011.5876979

A. Aissat, S. Nacer, H. Aliane, J. Vilcot

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引用次数: 2

摘要

本文研究了基于GaInAsSb在GaSb衬底上的应变结构井。GaSb衬底允许与GaInAsSb固溶体在1.7-3.5 μm范围内的网格一致性。评估了传导带和价的不连续。基于III-V的GaSb组件在光纤链路，通过大气窗口的雷达传输或空气探测和气体的光谱分析中有许多应用。从这种结构可以使半导体激光器在室温下连续工作，低非冷却探测器。

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Long wavelength determination of a strained quantum well structure based on GaxIn1−x−yAsySb1−y /GaSb for gas detection

In this paper we have studied strained structures wells based on GaInAsSb over GaSb substrate. The GaSb substrates allow the mesh accordability with the GaInAsSb solid solution in the range 1.7–3.5 μm. The conduction band and valence discontinuities are evaluated. A Basic source-detector direct transition has been demonstrated at 2–3 μ m. The III-V based GaSb components have many applications in optical fiber links, radar transmissions through atmospheric windows or air detection and spectroscopic analysis of the gases. From this structure it is possible to make semiconductor lasers operating continuously at room temperature, low non-cooled detectors.

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2011 Saudi International Electronics, Communications and Photonics Conference (SIECPC)

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