低中频l波段图像抑制接收器，采用0.8 μm CMOS技术

2006 International Conference on Microwaves, Radar & Wireless Communications Pub Date : 2006-05-22 DOI:10.1109/MIKON.2006.4345367

Z. Nosal

{"title":"低中频l波段图像抑制接收器，采用0.8 μm CMOS技术","authors":"Z. Nosal","doi":"10.1109/MIKON.2006.4345367","DOIUrl":null,"url":null,"abstract":"This paper presents detailed circuit description and test results for the simple low-IF image rejection receiver. The receiver is tunable over 1340 - 1500 MHz (typ.) frequency range and provides about 40 dB of image rejection without adjustments. The circuit was manufactured in a 0.8 μm CMOS technology from Austria Microsystems.","PeriodicalId":315003,"journal":{"name":"2006 International Conference on Microwaves, Radar & Wireless Communications","volume":"51 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low IF l-band image rejection receiver in 0.8 μm CMOS technology\",\"authors\":\"Z. Nosal\",\"doi\":\"10.1109/MIKON.2006.4345367\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents detailed circuit description and test results for the simple low-IF image rejection receiver. The receiver is tunable over 1340 - 1500 MHz (typ.) frequency range and provides about 40 dB of image rejection without adjustments. The circuit was manufactured in a 0.8 μm CMOS technology from Austria Microsystems.\",\"PeriodicalId\":315003,\"journal\":{\"name\":\"2006 International Conference on Microwaves, Radar & Wireless Communications\",\"volume\":\"51 3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Conference on Microwaves, Radar & Wireless Communications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIKON.2006.4345367\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Conference on Microwaves, Radar & Wireless Communications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIKON.2006.4345367","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文给出了一种简单的低中频图像抑制接收机的详细电路描述和测试结果。该接收器可在1340 - 1500 MHz(类型)频率范围内调谐，无需调整即可提供约40 dB的图像抑制。该电路采用奥地利微系统公司的0.8 μm CMOS技术制造。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Low IF l-band image rejection receiver in 0.8 μm CMOS technology

This paper presents detailed circuit description and test results for the simple low-IF image rejection receiver. The receiver is tunable over 1340 - 1500 MHz (typ.) frequency range and provides about 40 dB of image rejection without adjustments. The circuit was manufactured in a 0.8 μm CMOS technology from Austria Microsystems.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2006 International Conference on Microwaves, Radar & Wireless Communications

自引率

0.00%

发文量