PAMBE生长Pd/AlGaN/GaN异质结构的丙酮吸附特性:低温动力学解释

2018 IEEE SENSORS Pub Date : 2018-10-01 DOI:10.1109/ICSENS.2018.8589545

Subhashis Das, S. Majumdar, Saptarsi Ghosh, A. Bag, S. Sharma, D. Biswas

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引用次数: 1

摘要

采用一种基于金属-半导体-金属对称双向肖特基二极管传感器结构的AlGaN/GaN异质结构研究了丙酮在低温下的吸附动力学。通过等离子体辅助分子束外延在Si上生长了AlGaN/GaN异质结构(111)。探讨了丙酮在AlGaN表面吸附位点的覆盖率和丙酮吸附的有效平衡速率常数，以确定丙酮吸附-解吸的性质。

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Acetone Adsorption Characteristics of Pd/AlGaN/GaN Heterostructure Grown by PAMBE: A Kinetic Interpretation at Low Temperature

An AlGaN/GaN heterostructure based metal-semiconductor-metal symmetrically bi-directional Schottky diode sensor structure has been employed to investigate the kinetics of acetone adsorption at low temperatures. The AlGaN/GaN heterostructure has been grown by plasma-assisted molecular beam epitaxy on Si (111). Coverage of acetone adsorption sites at the AlGaN surface and the effective equilibrium rate constant of acetone adsorption have been explored to determine the nature of acetone adsorption-desorption.

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2018 IEEE SENSORS

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