M. Oehme, R. Koerner, K. Kostecki, S. Bechler, M. Gollhofer, J. Schulze
{"title":"IV族光子学光源","authors":"M. Oehme, R. Koerner, K. Kostecki, S. Bechler, M. Gollhofer, J. Schulze","doi":"10.1109/PHOSST.2016.7548536","DOIUrl":null,"url":null,"abstract":"Serving as the electrical to optical converter, the on-chip light source is the key component for monolithically integrated Group IV photonics. Here, we compare a variety of concepts for light generation on a Si chip, realized by Ge and GeSn heterostructures and quantum wells.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Light sources for group IV photonics\",\"authors\":\"M. Oehme, R. Koerner, K. Kostecki, S. Bechler, M. Gollhofer, J. Schulze\",\"doi\":\"10.1109/PHOSST.2016.7548536\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Serving as the electrical to optical converter, the on-chip light source is the key component for monolithically integrated Group IV photonics. Here, we compare a variety of concepts for light generation on a Si chip, realized by Ge and GeSn heterostructures and quantum wells.\",\"PeriodicalId\":337671,\"journal\":{\"name\":\"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PHOSST.2016.7548536\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PHOSST.2016.7548536","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Serving as the electrical to optical converter, the on-chip light source is the key component for monolithically integrated Group IV photonics. Here, we compare a variety of concepts for light generation on a Si chip, realized by Ge and GeSn heterostructures and quantum wells.