{"title":"基于GaN的s波段500W固态功率放大器(SSPA)对流层散射通信模块","authors":"S. Singh, L. Suthar, Rajendra Singh, Ashok Kumar","doi":"10.1109/IMaRC45935.2019.9118681","DOIUrl":null,"url":null,"abstract":"S-Band Troposcatter communication requires a linear high power 2 kW SSPA. The desired SSPA needs to be realized by phase combining 500 W Power Amplifier Modules (PAMs). The paper provides the design and development of a GaN based wideband Solid State Power Amplifier (SSPA) PAM module with RF output 500 watts or +57dBm. The system utilizes modular design approach using 300W SSPA Pallet as the basic building block. The amplifier device Cree GaN HEMT CGH21240F, in class-AB bias, was selected for realization of basic amplifier. The I/p and O/p matching circuits were designed and simulated in ADS software. 30 mil Rogers RO4350 substrate was used for fabrication of PCBs. The output RF power up to +57 dBm and good linearity with Power Added Efficiency (PAE) around 40 percent was achieved.","PeriodicalId":338001,"journal":{"name":"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"198 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"GaN Based S-Band 500W Solid State Power Amplifier (SSPA) Module for Troposcatter Communications\",\"authors\":\"S. Singh, L. Suthar, Rajendra Singh, Ashok Kumar\",\"doi\":\"10.1109/IMaRC45935.2019.9118681\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"S-Band Troposcatter communication requires a linear high power 2 kW SSPA. The desired SSPA needs to be realized by phase combining 500 W Power Amplifier Modules (PAMs). The paper provides the design and development of a GaN based wideband Solid State Power Amplifier (SSPA) PAM module with RF output 500 watts or +57dBm. The system utilizes modular design approach using 300W SSPA Pallet as the basic building block. The amplifier device Cree GaN HEMT CGH21240F, in class-AB bias, was selected for realization of basic amplifier. The I/p and O/p matching circuits were designed and simulated in ADS software. 30 mil Rogers RO4350 substrate was used for fabrication of PCBs. The output RF power up to +57 dBm and good linearity with Power Added Efficiency (PAE) around 40 percent was achieved.\",\"PeriodicalId\":338001,\"journal\":{\"name\":\"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"volume\":\"198 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMaRC45935.2019.9118681\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMaRC45935.2019.9118681","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
摘要
s波段对流层散射通信需要线性高功率2kw SSPA。所需的SSPA需要通过相组合500w功率放大器模块(pam)来实现。本文提出了一种基于GaN的宽带固态功率放大器(SSPA) PAM模块的设计与开发,该模块的射频输出功率为500瓦或+57dBm。系统采用模块化设计方法,以300W SSPA托盘为基本构件。基本放大器的实现选用ab类偏置的Cree GaN HEMT CGH21240F放大器器件。设计了I/p和O/p匹配电路,并在ADS软件中进行了仿真。采用30mil Rogers RO4350基板制备pcb。输出射频功率高达+57 dBm,线性度良好,功率附加效率(PAE)约为40%。
GaN Based S-Band 500W Solid State Power Amplifier (SSPA) Module for Troposcatter Communications
S-Band Troposcatter communication requires a linear high power 2 kW SSPA. The desired SSPA needs to be realized by phase combining 500 W Power Amplifier Modules (PAMs). The paper provides the design and development of a GaN based wideband Solid State Power Amplifier (SSPA) PAM module with RF output 500 watts or +57dBm. The system utilizes modular design approach using 300W SSPA Pallet as the basic building block. The amplifier device Cree GaN HEMT CGH21240F, in class-AB bias, was selected for realization of basic amplifier. The I/p and O/p matching circuits were designed and simulated in ADS software. 30 mil Rogers RO4350 substrate was used for fabrication of PCBs. The output RF power up to +57 dBm and good linearity with Power Added Efficiency (PAE) around 40 percent was achieved.