集成电路-封装相互作用的高级热建模

Zhibo Cao, M. Stocchi, M. Wietstruck, F. Garbuglia, Diego Pincini, M. Kaynak
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引用次数: 0

摘要

建立了包含详细板迹和封装信息的基于布局的有限元热对流模型。采用最先进的0.13 μ m SiGe BiCMOS芯片,嵌入式多电阻和热二极管作为热建模结果的实验验证。指定的热模型与实验结果的误差小于1.5摄氏度,具有很高的精度。基于布局的模型几何图形自动生成大大减少了模型开发过程中的时间消耗,并且为具有更高复杂性的包的建模铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Advanced Thermal Modeling of IC – Package Interaction
A layout based finite element thermal convection model including detailed board tracing and packaging information is developed. A state-of-art 0.13-µm SiGe BiCMOS chip with embedded poly-resistors and thermal diodes are used as experimental validations of thermal modelling results. The designated thermal model demonstrates a high accuracy of less than 1.5 Celsius deviation from experimental results. And the layout based automatic generation of model geometry drastically reduces time consumption during model development and, moreover, paves the way for modelling of packages which possess even higher complexities.
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