{"title":"场控晶闸管——具有先进电路的新型功率半导体","authors":"H. Gruening, J. Voboril","doi":"10.1109/PESC.1988.18276","DOIUrl":null,"url":null,"abstract":"Field-controlled thyristors (FCTs) exhibiting true normally-off characteristics without deterioration of the on-state are reported. Snubberless switching capability has been extended to 1200 V and 16 A (200 A/cm/sup 2/, dynamic avalanche). A novel latching mechanism, called current punchthrough, that limits the turn-off current is presented. Typical devise characteristics are reported for both a normally-on FCT with lifetime control (dV/dt=10 kV/ mu s) and a normally-off FCT without lifetime control (dV/dt=600 V/ mu s). The influence of the drive circuit (MOSFET-FCT and thyristor-FCT cascades) is discussed.<<ETX>>","PeriodicalId":283605,"journal":{"name":"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Field controlled thyristors-a new family of power semiconductors with advanced circuitry\",\"authors\":\"H. Gruening, J. Voboril\",\"doi\":\"10.1109/PESC.1988.18276\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Field-controlled thyristors (FCTs) exhibiting true normally-off characteristics without deterioration of the on-state are reported. Snubberless switching capability has been extended to 1200 V and 16 A (200 A/cm/sup 2/, dynamic avalanche). A novel latching mechanism, called current punchthrough, that limits the turn-off current is presented. Typical devise characteristics are reported for both a normally-on FCT with lifetime control (dV/dt=10 kV/ mu s) and a normally-off FCT without lifetime control (dV/dt=600 V/ mu s). The influence of the drive circuit (MOSFET-FCT and thyristor-FCT cascades) is discussed.<<ETX>>\",\"PeriodicalId\":283605,\"journal\":{\"name\":\"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1988.18276\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1988.18276","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Field controlled thyristors-a new family of power semiconductors with advanced circuitry
Field-controlled thyristors (FCTs) exhibiting true normally-off characteristics without deterioration of the on-state are reported. Snubberless switching capability has been extended to 1200 V and 16 A (200 A/cm/sup 2/, dynamic avalanche). A novel latching mechanism, called current punchthrough, that limits the turn-off current is presented. Typical devise characteristics are reported for both a normally-on FCT with lifetime control (dV/dt=10 kV/ mu s) and a normally-off FCT without lifetime control (dV/dt=600 V/ mu s). The influence of the drive circuit (MOSFET-FCT and thyristor-FCT cascades) is discussed.<>
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