用于短λ光通信的AlGaN/GaN基紫外激光二极管的性能增强

7th International Symposium on High-capacity Optical Networks and Enabling Technologies Pub Date : 2010-12-01 DOI:10.1109/HONET.2010.5715753

M. Khazir, M. Raja, Attaullah Shah, A. Mahmood

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引用次数: 0

摘要

研究了InAlN作为电子块层(EBL)的定性优化。对AlGaN和改性InAlN作为EBLs进行了分析比较。通过二维模拟，与非EBL和Al0.8Ga0.82N EBL相比，采用In0.18Al0.82N EBL设计的结构的发射强度有显著提高。这种增强可以归因于修饰的EBL在电子约束方面更有效，并且减少了载流子溢出到区域引起的效率下降。

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Performance enhancement of AlGaN/GaN based UV laser diode for short-λ optical communication

Qualitative optimization of the InAlN as electron-block layer (EBL) has been studied. Analytical comparisons of AlGaN and modified InAlN as EBLs have been performed. Using 2D simulation, significant improvement in the emission intensity of the designed structures with In0.18Al0.82N EBLs compared to similar with non-EBL and Al0.8Ga0.82N as EBL is observed. This enhancement can be attributed to the fact that modified EBL is more efficient in electron confinement and reduces the efficiency droop caused by carrier spillover into pregion.

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7th International Symposium on High-capacity Optical Networks and Enabling Technologies

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