{"title":"用鲁棒非线性码代替线性汉明码可以提高存储器的可靠性","authors":"Zhen Wang, M. Karpovsky, Konrad J. Kulikowski","doi":"10.1109/DSN.2009.5270297","DOIUrl":null,"url":null,"abstract":"Linear single-error-correcting, double-error-detecting (SEC-DED) codes used in the design of reliable memories cannot detect and can miscorrect errors with large Hamming weights. We propose protection for memory devices based on extended Vasil'ev codes. These nonlinear SECDED codes have a minimum distance of four, fewer undetectable errors and fewer errors that are miscorrected than linear codes with the same dimension and redundancy. The extended Vasil'ev codes can provide for higher reliability in the presence of repeating errors or high rate of multibitupsets. As far as we know, our paper is the only one discussing application of efficient nonlinear codes for design of reliable memories. The proposed approach can be applied to RAM, ROM, FLASH and disk memories with relatively low hardware overhead.","PeriodicalId":376982,"journal":{"name":"2009 IEEE/IFIP International Conference on Dependable Systems & Networks","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"30","resultStr":"{\"title\":\"Replacing linear Hamming codes by robust nonlinear codes results in a reliability improvement of memories\",\"authors\":\"Zhen Wang, M. Karpovsky, Konrad J. Kulikowski\",\"doi\":\"10.1109/DSN.2009.5270297\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Linear single-error-correcting, double-error-detecting (SEC-DED) codes used in the design of reliable memories cannot detect and can miscorrect errors with large Hamming weights. We propose protection for memory devices based on extended Vasil'ev codes. These nonlinear SECDED codes have a minimum distance of four, fewer undetectable errors and fewer errors that are miscorrected than linear codes with the same dimension and redundancy. The extended Vasil'ev codes can provide for higher reliability in the presence of repeating errors or high rate of multibitupsets. As far as we know, our paper is the only one discussing application of efficient nonlinear codes for design of reliable memories. The proposed approach can be applied to RAM, ROM, FLASH and disk memories with relatively low hardware overhead.\",\"PeriodicalId\":376982,\"journal\":{\"name\":\"2009 IEEE/IFIP International Conference on Dependable Systems & Networks\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"30\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE/IFIP International Conference on Dependable Systems & Networks\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DSN.2009.5270297\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE/IFIP International Conference on Dependable Systems & Networks","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DSN.2009.5270297","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Replacing linear Hamming codes by robust nonlinear codes results in a reliability improvement of memories
Linear single-error-correcting, double-error-detecting (SEC-DED) codes used in the design of reliable memories cannot detect and can miscorrect errors with large Hamming weights. We propose protection for memory devices based on extended Vasil'ev codes. These nonlinear SECDED codes have a minimum distance of four, fewer undetectable errors and fewer errors that are miscorrected than linear codes with the same dimension and redundancy. The extended Vasil'ev codes can provide for higher reliability in the presence of repeating errors or high rate of multibitupsets. As far as we know, our paper is the only one discussing application of efficient nonlinear codes for design of reliable memories. The proposed approach can be applied to RAM, ROM, FLASH and disk memories with relatively low hardware overhead.