用鲁棒非线性码代替线性汉明码可以提高存储器的可靠性

Zhen Wang, M. Karpovsky, Konrad J. Kulikowski
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引用次数: 30

摘要

用于可靠存储器设计的线性单纠错双纠错(SEC-DED)码不能检测并能纠错具有较大汉明权值的错误。我们提出了基于扩展Vasil'ev代码的存储设备保护。与具有相同维数和冗余度的线性码相比,这些非线性SECDED码的最小距离为4,不可检测错误更少,错误纠正更少。扩展的Vasil'ev码可以在存在重复错误或高多位干扰率的情况下提供更高的可靠性。据我们所知,本文是唯一一篇讨论有效非线性编码在可靠存储器设计中的应用的论文。所提出的方法可以应用于RAM, ROM, FLASH和磁盘存储器,硬件开销相对较低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Replacing linear Hamming codes by robust nonlinear codes results in a reliability improvement of memories
Linear single-error-correcting, double-error-detecting (SEC-DED) codes used in the design of reliable memories cannot detect and can miscorrect errors with large Hamming weights. We propose protection for memory devices based on extended Vasil'ev codes. These nonlinear SECDED codes have a minimum distance of four, fewer undetectable errors and fewer errors that are miscorrected than linear codes with the same dimension and redundancy. The extended Vasil'ev codes can provide for higher reliability in the presence of repeating errors or high rate of multibitupsets. As far as we know, our paper is the only one discussing application of efficient nonlinear codes for design of reliable memories. The proposed approach can be applied to RAM, ROM, FLASH and disk memories with relatively low hardware overhead.
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