利用TCAD仿真优化用于太赫兹探测的Si MOS晶体管

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI:10.1109/SISPAD.2014.6931601

R. Jain, H. Rucker, N. Mohapatra

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引用次数: 3

摘要

本文提出了一种硅MOSFET太赫兹探测器的TCAD仿真研究。分析了晶体管掺杂谱优化对探测器性能的影响。时域模拟用于提取太赫兹激励下的直流响应，并探讨不同器件寄生的影响。结果表明，通过(1)最小化源侧寄生电阻(2)最大化漏侧寄生电阻(3)最小化漏侧和通道对体电容，可以改善直流响应。

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Optimization of Si MOS transistors for THz detection using TCAD simulation

We present a TCAD simulation study for Silicon MOSFET terahertz detectors. The impact of transistor doping profile optimization on detector performance is analyzed. Time-domain simulations are used to extract the DC response to THz excitations and to explore the impact of different device parasitics. It is shown that the DC response can be improved by (1) minimizing the source-side parasitic resistance (2) maximizing the drain-side parasitic resistance and (3) minimizing the drain-to-body and channel-to-body capacitances.

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来源期刊

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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