深亚微米mosfet参数提取的新方法

ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095) Pub Date : 2000-03-13 DOI:10.1109/ICMTS.2000.844428

C. Mourrain, B. Crețu, G. Ghibaudo, P. Cottin

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引用次数: 41

摘要

提出了一种包含二阶迁移率衰减的MOSFET参数提取新方法。该方法的优点是与已有的方法保持兼容，避免了二阶导数过程，因此适用于微电子工业的在线参数测试提取。

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New method for parameter extraction in deep submicrometer MOSFETs

A new method for the MOSFET parameter extraction including second order mobility attenuation is proposed. The advantage of the method is to remain compatible with previously existing ones avoiding second order derivative procedure and therefore to be applicable for in line parametric test extraction in the microelectronics industry.

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来源期刊

ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)

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