LPE GaP中的光电导率:Cu

P. Petersen, R. G. Schulze
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引用次数: 0

摘要

研究了掺杂铜的LPE GaP的光导性能。生长表面的光响应范围为2.2 ~ 5.0 eV。光导增益高达105已被测量。对低水平照明的光导响应时间通常为几毫秒,光信号的空间均匀性在3毫米的距离上小于10%。通过光猝灭和光信号随光子通量的变化研究了其光机理。这些数据可以用敏化光电导率模型解释。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Photoconductivity in LPE GaP:Cu
The photoconductive properties of copper doped LPE GaP have been investigated. The photoresponse of as-grown surfaces extends from 2.2 to 5.0 eV. Photoconductive gains as high as 105have been measured. The photoconductive response time to low levels of illumination is typically a few milliseconds and the spatial uniformity of the photosignal is less than 10% over distances of 3 mm. The photomechanism has been investigated by optical quenching and by study of the variation in photosignal with photon flux. These data are interpretable with the sensitized photoconductivity model.
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