等离子体增强ALD沉积MoS2高k介电介质的比较研究

2019 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2019-06-01 DOI:10.23919/SNW.2019.8782902

W. Chang, N. Okada, H. Asai, K. Fukuda, Mitsuhiro Okada, T. Endo, Y. Miyata, T. Irisawa

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引用次数: 1

摘要

采用等离子体增强原子层沉积(PEALD)的方法在MoS2上直接沉积了Al2O3、HfO2和ZrO2等高k介电体。其中，peal - zro2 /MoS2界面质量最高，具有较高的介电常数和清晰的界面。双栅cvd生长MoS2 mosfet使用PEALD-ZrO2作为顶栅电介质也已被证明。

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Comparative Study of High-k Dielectric on MoS2 Deposited by Plasma Enhanced ALD

High-k dielectrics of Al2O3, HfO2 and ZrO2 have been directly deposited on MoS2 through plasma enhanced atomic layer deposition (PEALD). Among them, PEALD-ZrO2/MoS2 has shown the highest interfacial quality with high dielectric constant and sharp interface, characterized by CV, XPS and TEM measurements. Dual gate CVD-grown MoS2 MOSFETs using PEALD-ZrO2 as a top-gate dielectric has also been demonstrated.

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2019 Silicon Nanoelectronics Workshop (SNW)

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