基于隧道磁阻效应的模拟存储单元

2010 20th International Crimean Conference "Microwave & Telecommunication Technology" Pub Date : 2010-11-11 DOI:10.1109/CRMICO.2010.5632956

A. Kostrov, V. Stempitsky

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引用次数: 0

摘要

提出了一种基于隧道磁阻效应的自旋记忆电池的设计方法。建立了用于计算机仿真系统的自旋存储单元的动态行为模型和spice-宏模型。静态和动态模式下的仿真结果与实验结果相比较，表明了模型的准确性和充分性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Simulation memory cell based on tunnel magnetoresistance effect

The design of the spin memory cell on tunnel magnetoresistance effect in a magnetic tunnel junction is presented. The dynamic behavioral model and spice-macromodel of a spin memory cell are developed for using in computer simulation systems. The simulation results in static and dynamic modes have shown acceptable accuracy and adequacy of the models in comparison with the experiment.

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2010 20th International Crimean Conference "Microwave & Telecommunication Technology"

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