顶层n型700v三层复用LDMOS边缘端接设计

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Pub Date : 2017-05-01 DOI:10.23919/ISPSD.2017.7988953

M. Qiao, Zhengkang Wang, Huihui Wang, Feng Jin, Zhaoji Li, Bo Zhang

{"title":"顶层n型700v三层复用LDMOS边缘端接设计","authors":"M. Qiao, Zhengkang Wang, Huihui Wang, Feng Jin, Zhaoji Li, Bo Zhang","doi":"10.23919/ISPSD.2017.7988953","DOIUrl":null,"url":null,"abstract":"This paper presents three-dimensional (3-D) edge termination design of a 700-V triple reduced surface field (RESURF) lateral double-diffused MOSFET (LDMOS) with n-type top (n-top) layer. It is found that breakdown characteristics deterioration related to the electric field crowding and the local charge imbalance in the edge termination. The two crucial parameters L<inf>P</inf> and L<inf>2</inf> in the layout of the transition region of the edge termination were studied by 3-D numerical simulations and experiments to overcome these issues. As implantation dose of n-top layer (D<inf>ntop</inf>) increases from 0.8 × cm−2 to 1.2 × cm−2, progressive performance with Fß from 805 V to 711 V and R<inf>on, sp</inf> from 86.49 mΩ· cm2 to 80.56 mΩ·cm2 is experimental obtained and the novel LDMOS demonstrates maximum figure of merit (FOM) in the latest existing 700-V LDMOS technologies.","PeriodicalId":202561,"journal":{"name":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","volume":"2012 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Edge termination design of a 700-V triple RESURF LDMOS with n-type top layer\",\"authors\":\"M. Qiao, Zhengkang Wang, Huihui Wang, Feng Jin, Zhaoji Li, Bo Zhang\",\"doi\":\"10.23919/ISPSD.2017.7988953\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents three-dimensional (3-D) edge termination design of a 700-V triple reduced surface field (RESURF) lateral double-diffused MOSFET (LDMOS) with n-type top (n-top) layer. It is found that breakdown characteristics deterioration related to the electric field crowding and the local charge imbalance in the edge termination. The two crucial parameters L<inf>P</inf> and L<inf>2</inf> in the layout of the transition region of the edge termination were studied by 3-D numerical simulations and experiments to overcome these issues. As implantation dose of n-top layer (D<inf>ntop</inf>) increases from 0.8 × cm−2 to 1.2 × cm−2, progressive performance with Fß from 805 V to 711 V and R<inf>on, sp</inf> from 86.49 mΩ· cm2 to 80.56 mΩ·cm2 is experimental obtained and the novel LDMOS demonstrates maximum figure of merit (FOM) in the latest existing 700-V LDMOS technologies.\",\"PeriodicalId\":202561,\"journal\":{\"name\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"volume\":\"2012 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ISPSD.2017.7988953\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISPSD.2017.7988953","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 13

摘要

提出了一种具有n型顶层的700 v三还原表面场(RESURF)横向双扩散MOSFET (LDMOS)的三维边缘端接设计。发现击穿特性的恶化与电场拥挤和边缘端部局部电荷不平衡有关。通过三维数值模拟和实验研究了边缘末端过渡区布局中的两个关键参数LP和L2。随着n-top层(Dntop)的注入剂量从0.8 × cm−2增加到1.2 × cm−2，实验得到了Fß从805 V增加到711 V, Ron, sp从86.49 mΩ·cm2增加到80.56 mΩ·cm2的渐进式性能，该新型LDMOS在现有的最新700 V LDMOS技术中表现出最大的优值(FOM)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Edge termination design of a 700-V triple RESURF LDMOS with n-type top layer

This paper presents three-dimensional (3-D) edge termination design of a 700-V triple reduced surface field (RESURF) lateral double-diffused MOSFET (LDMOS) with n-type top (n-top) layer. It is found that breakdown characteristics deterioration related to the electric field crowding and the local charge imbalance in the edge termination. The two crucial parameters LP and L2 in the layout of the transition region of the edge termination were studied by 3-D numerical simulations and experiments to overcome these issues. As implantation dose of n-top layer (Dntop) increases from 0.8 × cm⁻² to 1.2 × cm⁻², progressive performance with Fß from 805 V to 711 V and Ron, sp from 86.49 mΩ· cm² to 80.56 mΩ·cm² is experimental obtained and the novel LDMOS demonstrates maximum figure of merit (FOM) in the latest existing 700-V LDMOS technologies.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

自引率

0.00%

发文量