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引用次数: 0
摘要
固态振荡器广泛应用于微波设备中，用户对其要求越来越高，尤其是在可靠性和频谱纯度方面。最近在开发最大振荡频率大于 12 GHz 的双极 si 晶体管方面取得的进展，使我们能够考虑实现 X 波段的双极晶体管源和 VCO。作者介绍了一种原始的 10 GHz 小型化双极 VCO 的实现情况，它具有特别低的频率噪声水平（在 1 Hz 带宽内，与载波相差 50 KHz 时小于 90 dB）。作者列举了该器件的性能，并将其与更传统的器件进行了比较：Gunn 振荡器和 FET - AsGa 振荡器。
Comparative Study of Bipolar, FET and Gunn X Band Oscillators
Solid state oscillators are widely used in microwave equipments and users are becoming more and more hard to please especially where reliability and spectral purity are concerned. The progress recently accomplished in the development of bipolar si transistors with a maximum oscillation frequency greater than 12 GHz enables us to consider the realization of bipolar transistor sources and VCO for X band. The author described the realization of an original 10 GHz miniaturized bipolar VCO with a particular low frequency noise level (less than 90 dB at 50 KHz from the carrier in a 1 Hz bandwidth). The performances of this device are enumerated and compared to those of more traditional devices : Gunn oscillators and FET - AsGa oscillators.
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