{"title":"考虑栅极漏电流的GaN大功率放大器mmic的设计与测量","authors":"M. Bhavsar, Puja Srivastava, D. Singh, K. Parikh","doi":"10.1109/imarc49196.2021.9714691","DOIUrl":null,"url":null,"abstract":"This paper presents design, development and characterization of GaN based high power amplifier Monolithic Microwave Integrated Circuits (MMICs) at C-band and Ka-band. The MMICs are designed using GaN MMIC processes from UMS foundry. The C-band MMIC is designed using space evaluated $0.25\\mu\\mathrm{m}$ Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) process and the Kaband MMIC is designed using $0.15\\mu$ m GaN HEMT process which is under space evaluation. On-wafer measurements of both the MIMICs were carried out. The C-band MIMIC exhibits output power, Power Added Efficiency (PAE) and Gain better than $ 43\\mathrm{dBm},$43% and 25dB respectively. At Ka-band output power, PAE and Gain better than $ 38\\mathrm{dBm},$ 30% and 18dB are achieved respectively. The MMICs are tested in test modules exhibiting similar performances. The paper also discusses about observed drain current runaway phenomena in GaN amplifiers due to gate leakage current. Importance of gate series resistor value selection is discussed to avoid this runaway and to prevent eventual burn-out of the chip transistor.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Design and Measurement of GaN High Power Amplifier MMICs considering Gate Leakage Current\",\"authors\":\"M. Bhavsar, Puja Srivastava, D. Singh, K. Parikh\",\"doi\":\"10.1109/imarc49196.2021.9714691\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents design, development and characterization of GaN based high power amplifier Monolithic Microwave Integrated Circuits (MMICs) at C-band and Ka-band. The MMICs are designed using GaN MMIC processes from UMS foundry. The C-band MMIC is designed using space evaluated $0.25\\\\mu\\\\mathrm{m}$ Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) process and the Kaband MMIC is designed using $0.15\\\\mu$ m GaN HEMT process which is under space evaluation. On-wafer measurements of both the MIMICs were carried out. The C-band MIMIC exhibits output power, Power Added Efficiency (PAE) and Gain better than $ 43\\\\mathrm{dBm},$43% and 25dB respectively. At Ka-band output power, PAE and Gain better than $ 38\\\\mathrm{dBm},$ 30% and 18dB are achieved respectively. The MMICs are tested in test modules exhibiting similar performances. The paper also discusses about observed drain current runaway phenomena in GaN amplifiers due to gate leakage current. Importance of gate series resistor value selection is discussed to avoid this runaway and to prevent eventual burn-out of the chip transistor.\",\"PeriodicalId\":226787,\"journal\":{\"name\":\"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/imarc49196.2021.9714691\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/imarc49196.2021.9714691","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
本文介绍了基于氮化镓的c波段和ka波段高功率放大器单片微波集成电路的设计、开发和特性。MMIC采用来自UMS铸造厂的GaN MMIC工艺设计。c波段MMIC采用空间评估的$0.25\mu\mathrm{m}$氮化镓(GaN)高电子迁移率晶体管(HEMT)工艺设计,而Kaband MMIC采用空间评估的$0.15\mu$ m GaN HEMT工艺设计。对这两种MIMICs进行了晶圆上测量。c波段MIMIC的输出功率、功率附加效率(PAE)和增益分别优于$43 \ mathm {dBm}、$43%和25dB。在ka波段输出功率下,PAE和增益分别优于$ 38\math {dBm}、$ 30%和18dB。在测试模块中对mmic进行了测试,显示出相似的性能。本文还讨论了在GaN放大器中观察到的由于栅漏电流引起的漏极电流失控现象。讨论了栅极串联电阻值选择的重要性,以避免这种失控和防止芯片晶体管最终烧毁。
Design and Measurement of GaN High Power Amplifier MMICs considering Gate Leakage Current
This paper presents design, development and characterization of GaN based high power amplifier Monolithic Microwave Integrated Circuits (MMICs) at C-band and Ka-band. The MMICs are designed using GaN MMIC processes from UMS foundry. The C-band MMIC is designed using space evaluated $0.25\mu\mathrm{m}$ Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) process and the Kaband MMIC is designed using $0.15\mu$ m GaN HEMT process which is under space evaluation. On-wafer measurements of both the MIMICs were carried out. The C-band MIMIC exhibits output power, Power Added Efficiency (PAE) and Gain better than $ 43\mathrm{dBm},$43% and 25dB respectively. At Ka-band output power, PAE and Gain better than $ 38\mathrm{dBm},$ 30% and 18dB are achieved respectively. The MMICs are tested in test modules exhibiting similar performances. The paper also discusses about observed drain current runaway phenomena in GaN amplifiers due to gate leakage current. Importance of gate series resistor value selection is discussed to avoid this runaway and to prevent eventual burn-out of the chip transistor.