提高硅衬底InAs量子点激光器的可靠性

2019 IEEE Photonics Conference (IPC) Pub Date : 2019-09-01 DOI:10.1109/IPCon.2019.8908457

Jennifer Selvidge, J. Norman, D. Jung, Eammon Hughes, M. Salmon, J. Bowers, R. Herrick, K. Mukherjee

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引用次数: 1

摘要

利用相关电子显微镜技术，我们表征了InAs量子点(QD)结构中位错的光电和结构特性。结果表明，虽然位错对量子点发光有显著影响，但在量子阱结构的老化过程中，复合增强的位错爬升速率明显减慢。

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Improving Reliability of InAs Quantum Dot Lasers on Silicon Substrates

Using correlated electron microscopy techniques, we characterize optoelectronic and structural properties of dislocation in InAs quantum dots (QD) structures. Results indicate that although dislocations significantly affect QD luminescence, the rate of recombination enhanced dislocation climb slows noticeably during the aging process from quantum well structures.

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2019 IEEE Photonics Conference (IPC)

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