{"title":"基于混合v /sub / (MVT)技术的低功耗门级设计","authors":"F. Sill, F. Grassert, D. Timmermann","doi":"10.1145/1016568.1016641","DOIUrl":null,"url":null,"abstract":"The reduction of leakage power has become an important issue for high performance designs. One way to achieve low-leakage and high performance designs is the use of multi-threshold techniques. In this paper, a new mixed-V/sub th/ (MVT) CMOS design technique is proposed, which uses different threshold voltages within a logic gate. This new technique allows the reduction of leakage power, while the performance stays constant. A set of algorithms is given assigning optimal distribution of gates. Results indicate that the new MVT approach can provide up to 40% leakage reduction by constant performance compared to dual-V/sub th/ (DVT) gate-level techniques.","PeriodicalId":275811,"journal":{"name":"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Low power gate-level design with mixed-V/sub th/ (MVT) techniques\",\"authors\":\"F. Sill, F. Grassert, D. Timmermann\",\"doi\":\"10.1145/1016568.1016641\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The reduction of leakage power has become an important issue for high performance designs. One way to achieve low-leakage and high performance designs is the use of multi-threshold techniques. In this paper, a new mixed-V/sub th/ (MVT) CMOS design technique is proposed, which uses different threshold voltages within a logic gate. This new technique allows the reduction of leakage power, while the performance stays constant. A set of algorithms is given assigning optimal distribution of gates. Results indicate that the new MVT approach can provide up to 40% leakage reduction by constant performance compared to dual-V/sub th/ (DVT) gate-level techniques.\",\"PeriodicalId\":275811,\"journal\":{\"name\":\"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/1016568.1016641\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1016568.1016641","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low power gate-level design with mixed-V/sub th/ (MVT) techniques
The reduction of leakage power has become an important issue for high performance designs. One way to achieve low-leakage and high performance designs is the use of multi-threshold techniques. In this paper, a new mixed-V/sub th/ (MVT) CMOS design technique is proposed, which uses different threshold voltages within a logic gate. This new technique allows the reduction of leakage power, while the performance stays constant. A set of algorithms is given assigning optimal distribution of gates. Results indicate that the new MVT approach can provide up to 40% leakage reduction by constant performance compared to dual-V/sub th/ (DVT) gate-level techniques.