基于混合v /sub / (MVT)技术的低功耗门级设计

F. Sill, F. Grassert, D. Timmermann
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引用次数: 12

摘要

降低泄漏功率已成为高性能设计的一个重要问题。实现低泄漏和高性能设计的一种方法是使用多阈值技术。本文提出了一种新的混合v /sub / (MVT) CMOS设计技术,该技术在逻辑门内使用不同的阈值电压。这种新技术可以减少泄漏功率,同时保持性能不变。给出了一组门的最优分配算法。结果表明,与双v /sub / (DVT)门级技术相比,新的MVT方法可以在恒定性能下减少高达40%的泄漏。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low power gate-level design with mixed-V/sub th/ (MVT) techniques
The reduction of leakage power has become an important issue for high performance designs. One way to achieve low-leakage and high performance designs is the use of multi-threshold techniques. In this paper, a new mixed-V/sub th/ (MVT) CMOS design technique is proposed, which uses different threshold voltages within a logic gate. This new technique allows the reduction of leakage power, while the performance stays constant. A set of algorithms is given assigning optimal distribution of gates. Results indicate that the new MVT approach can provide up to 40% leakage reduction by constant performance compared to dual-V/sub th/ (DVT) gate-level techniques.
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