具有横截面的模型量子线中的自旋极化

Wang Chuan-kui, Wang Hong-song, Zhang Qing-gang
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摘要

本文报道了GaAs与AlxGa1-xAs相互干扰时二维电子气形成的小封闭量子系统的电子结构的数值研究。应用Kohn-Sham自旋密度泛函理论。自洽的结果表明,由于束缚态的存在,量子系统的自旋向上和自旋向下的电子数是不相等的。然后发现自旋向上和自旋向下电子的有效势能分布有很大的不同,这将导致不同的透射系数。值得注意的是,这种自旋极化是由纳米结构的几何形状引起的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Spin polarization in a model quantum wire with a cross-section
Numerical investigation of the electronic structure of a small closed quantum system fabricated on the two-dimensional electron gas forming on the interference between GaAs and AlxGa1-xAs is reported. The Kohn-Sham spin-density-functional theory is applied. Self-consistent results show that the quantum system assumes unequal numbers of electrons for spin up and spin down because of the existence of bound states. The profiles of effective potential energies for spin up and spin down electrons are then found to be very different, which will result in different transmission coefficients. It is notable that this spin polarization is caused by the geometry of the nanostructure.
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