一种用于光收发器的高性能宽带CMOS通阻放大器

S. M. Rezaul Hasan
{"title":"一种用于光收发器的高性能宽带CMOS通阻放大器","authors":"S. M. Rezaul Hasan","doi":"10.1109/IWSOC.2003.1213010","DOIUrl":null,"url":null,"abstract":"This paper describes a novel low noise CMOS current feed-back transimpedance amplifier using a low-cost Agilent 0.5 /spl mu/m 3M2p CMOS process technology. The bandwidth of the amplifier was extended using inductive peaking technique and simulation results indicated a -3 dB bandwidth of 3.5 GHz with a transimpedance gain of /spl ap/ 60 dB ohms. The dynamic range of the amplifier was high enough to enable an output voltage swing of around 400 mV for a test input current of 100 /spl mu/A. The output noise voltage spectral density was 12 nV/sqrt(Hz) (with a peak of /spl ap/ 25 nV/sqrt(Hz)), while the input referred noise current spectral density was below 20 pA/sqrt(Hz) within the amplifier frequency band.","PeriodicalId":259178,"journal":{"name":"The 3rd IEEE International Workshop on System-on-Chip for Real-Time Applications, 2003. Proceedings.","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A high performance wide-band CMOS transimpedance amplifier for optical transceivers\",\"authors\":\"S. M. Rezaul Hasan\",\"doi\":\"10.1109/IWSOC.2003.1213010\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a novel low noise CMOS current feed-back transimpedance amplifier using a low-cost Agilent 0.5 /spl mu/m 3M2p CMOS process technology. The bandwidth of the amplifier was extended using inductive peaking technique and simulation results indicated a -3 dB bandwidth of 3.5 GHz with a transimpedance gain of /spl ap/ 60 dB ohms. The dynamic range of the amplifier was high enough to enable an output voltage swing of around 400 mV for a test input current of 100 /spl mu/A. The output noise voltage spectral density was 12 nV/sqrt(Hz) (with a peak of /spl ap/ 25 nV/sqrt(Hz)), while the input referred noise current spectral density was below 20 pA/sqrt(Hz) within the amplifier frequency band.\",\"PeriodicalId\":259178,\"journal\":{\"name\":\"The 3rd IEEE International Workshop on System-on-Chip for Real-Time Applications, 2003. Proceedings.\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 3rd IEEE International Workshop on System-on-Chip for Real-Time Applications, 2003. Proceedings.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWSOC.2003.1213010\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 3rd IEEE International Workshop on System-on-Chip for Real-Time Applications, 2003. Proceedings.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWSOC.2003.1213010","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

本文介绍了一种采用低成本安捷伦0.5 /spl μ m 3M2p CMOS工艺技术的新型低噪声CMOS电流反馈跨阻放大器。利用感应峰值技术扩展了放大器的带宽,仿真结果表明,-3 dB带宽为3.5 GHz,通阻增益为/spl ap/ 60 dB欧姆。放大器的动态范围足够高,可以在测试输入电流为100 /spl mu/ a时实现约400 mV的输出电压摆幅。输出噪声电压谱密度为12 nV/sqrt(Hz)(峰值为/spl ap/ 25 nV/sqrt(Hz)),而输入参考噪声电流谱密度在放大器频带内低于20 pA/sqrt(Hz)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A high performance wide-band CMOS transimpedance amplifier for optical transceivers
This paper describes a novel low noise CMOS current feed-back transimpedance amplifier using a low-cost Agilent 0.5 /spl mu/m 3M2p CMOS process technology. The bandwidth of the amplifier was extended using inductive peaking technique and simulation results indicated a -3 dB bandwidth of 3.5 GHz with a transimpedance gain of /spl ap/ 60 dB ohms. The dynamic range of the amplifier was high enough to enable an output voltage swing of around 400 mV for a test input current of 100 /spl mu/A. The output noise voltage spectral density was 12 nV/sqrt(Hz) (with a peak of /spl ap/ 25 nV/sqrt(Hz)), while the input referred noise current spectral density was below 20 pA/sqrt(Hz) within the amplifier frequency band.
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