{"title":"基于InAs量子点半导体光放大器交叉增益调制的全光倒三极管","authors":"Y. Maeda, S. Maki, Y. Kuroki, H. Nakayama, J. Huh","doi":"10.1109/AOE.2007.4410723","DOIUrl":null,"url":null,"abstract":"We designed active layer of 15 stacks of InAs quantum dots, AIGaAs/GaAs double heterostructure and fabricated QD-SOAs for optical inverted triode. Our results demonstrate input, control and output waveforms, and input-output characteristics of the optical triode. It was obtained high speed response time at higher bit rate of 40 Gbps.","PeriodicalId":370885,"journal":{"name":"2007 Asia Optical Fiber Communication and Optoelectronics Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"All-optical inverted triode based on cross-gain modulation using InAs quantum dot semiconductor optical amplifiers\",\"authors\":\"Y. Maeda, S. Maki, Y. Kuroki, H. Nakayama, J. Huh\",\"doi\":\"10.1109/AOE.2007.4410723\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We designed active layer of 15 stacks of InAs quantum dots, AIGaAs/GaAs double heterostructure and fabricated QD-SOAs for optical inverted triode. Our results demonstrate input, control and output waveforms, and input-output characteristics of the optical triode. It was obtained high speed response time at higher bit rate of 40 Gbps.\",\"PeriodicalId\":370885,\"journal\":{\"name\":\"2007 Asia Optical Fiber Communication and Optoelectronics Conference\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-12-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Asia Optical Fiber Communication and Optoelectronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AOE.2007.4410723\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Asia Optical Fiber Communication and Optoelectronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AOE.2007.4410723","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
All-optical inverted triode based on cross-gain modulation using InAs quantum dot semiconductor optical amplifiers
We designed active layer of 15 stacks of InAs quantum dots, AIGaAs/GaAs double heterostructure and fabricated QD-SOAs for optical inverted triode. Our results demonstrate input, control and output waveforms, and input-output characteristics of the optical triode. It was obtained high speed response time at higher bit rate of 40 Gbps.