大功率InGaN led不可预测故障标准

2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2016-04-18 DOI:10.1109/EUROSIME.2016.7463337

A. Chernyakov, A. Kartashova, N. Shmidt, E. Shabunina, N. A. Talnishnikh, A. L. Zakgeim

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引用次数: 0

摘要

给出了在450 ~ 460 nm处外量子效率(EQE) ~ 40 ~ 50%的商用InGaN/GaN led的降解研究结果。已经阐明了导致EQE退化和led不可预测失效的机制之一是载流子的多声子重组。I-V特性在U <处的畸变正向分支;在led进行100小时老化测试之前或之后，2V和SI ~j4部分的外观对电流光谱噪声密度的依赖是识别不可预测故障的标准。

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Criteria of unpredictable failure for high-power InGaN LEDs

The results of the degradation study of commercial InGaN/GaN LEDs with the external quantum efficiency (EQE) ~ 40-50 % at 450-460 nm are presented. It has been clarified that one of the mechanisms responsible for EQE degradation and the unpredictable failure of LEDs is the multiphonon recombination of carriers. The distorted forward branch of I-V characteristics at U <; 2V and the appearance of the SI ~j4 section on the current spectral noise density dependences on current density in LEDs before or after 100 hours of aging test are the criteria identifying an unpredictable failure.

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2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

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