{"title":"用于频域分析的非线性器件黑盒建模","authors":"T. Narhi","doi":"10.1109/EUMA.1992.335853","DOIUrl":null,"url":null,"abstract":"A large-signal black-box model for nonlinear microwave devices is presented. The model is directly constructed from measured small-signal s-parameters and DC characteristic curves of the device without complicated parameter extraction procedures. Separate determination of device parasitics is not necessary. The model is self-consistent, very general and device-and technology-independent. Black-box model of a MESFET and its implementation in a frequency-domain analysis program is described, and measured and calculated results are compared.","PeriodicalId":317106,"journal":{"name":"1992 22nd European Microwave Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Black-Box Modelling of Nonlinear Devices for Frequency-Domain Analysis\",\"authors\":\"T. Narhi\",\"doi\":\"10.1109/EUMA.1992.335853\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A large-signal black-box model for nonlinear microwave devices is presented. The model is directly constructed from measured small-signal s-parameters and DC characteristic curves of the device without complicated parameter extraction procedures. Separate determination of device parasitics is not necessary. The model is self-consistent, very general and device-and technology-independent. Black-box model of a MESFET and its implementation in a frequency-domain analysis program is described, and measured and calculated results are compared.\",\"PeriodicalId\":317106,\"journal\":{\"name\":\"1992 22nd European Microwave Conference\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 22nd European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1992.335853\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 22nd European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1992.335853","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Black-Box Modelling of Nonlinear Devices for Frequency-Domain Analysis
A large-signal black-box model for nonlinear microwave devices is presented. The model is directly constructed from measured small-signal s-parameters and DC characteristic curves of the device without complicated parameter extraction procedures. Separate determination of device parasitics is not necessary. The model is self-consistent, very general and device-and technology-independent. Black-box model of a MESFET and its implementation in a frequency-domain analysis program is described, and measured and calculated results are compared.
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