纳米真空通道晶体管的环境适应性与失效分析

2020 IEEE 21st International Conference on Vacuum Electronics (IVEC) Pub Date : 2020-10-19 DOI:10.1109/IVEC45766.2020.9520635

Xinghui Li, P. Han, Yunzhu Xie, Ting Du, Jun Cai, Jinjun Feng

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引用次数: 0

摘要

采用薄膜沉积和聚焦离子束刻蚀的方法制备了垂直环栅结构的金属发射体纳米真空通道晶体管。进行了不同真空环境下晶体管的适应性测试和失效分析，为增强稳定性和提高器件性能奠定了基础。

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Environments Adaptability and Failure Analysis of Nanoscale Vacuum Channel Transistors

Metal-emitter-based nanoscale vacuum channel transistors with vertical surround-gate configuration were fabricated by using thin-film deposition and focus ion beam etching. Adaptability testing in different vacuum environments and failure analysis of the transistors were carried out to make the basis for stability enhancement and component performance improvement.

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2020 IEEE 21st International Conference on Vacuum Electronics (IVEC)

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