基于一阶积木近似的gm/ID米勒放大器设计

V. H. A. Palma, F. Sandoval-Ibarra
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引用次数: 1

摘要

本文采用gm/ID方法设计模拟CMOS电路。单端Miller OTA设计作为一个研究案例得到了广泛的讨论和分析。为了显示gm/ID的优势,证明了一阶构建块近似不仅可以理解如何正确地做每个晶体管的尺寸,而且还可以理解每个小信号设计模型的物理意义。该设计流程是通过使用130纳米CMOS技术的设计规则来执行的,其中使用Cadence在晶体管级别进行模拟,获得的结果证实了设计模型的实用性和基础的准确性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of a Miller Amplifier using gm/ID based on A First-order Building Block Approximation
In this paper the gm/ID methodology for designing analog CMOS circuits is used. As a case of study the single-ended Miller OTA design is widely discussed and analized. In order to show the advantage of gm/ID it is demonstrated that the first order building block approximation allows to understand not only how to correctly do the sizing of each transistor, but also the physical meaning of each small-signal design model. This design flow is carried out by using design rules of a 130 nm CMOS technology, where Cadence is used for performing simulations at transistor level, obtaining results that confirm the usefullnes of the design models and the basics’ veracity.
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