电阻比(RR)作为金属薄膜监视器

28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI:10.1109/RELPHY.1990.66073

W. Baerg, K. Wu, P. Davies, G. Dao, D. Fraser

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引用次数: 7

摘要

本文给出的数据表明，电阻率(RR)在298k和77k之间的电阻比对于监测铝硅金属薄膜的均匀性是有用的。以N/sub 2/和H/sub 2/O污染薄膜为例，给出了金属的RR、电迁移中失效时间(MTTF)和中晶粒半径(MGR)之间的相关性

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The electrical resistance ratio (RR) as a thin film metal monitor

Data that demonstrate the usefulness of RR, the electrical resistance ratio between 298 K and 77 K, for monitoring the equality of Al-Si metal films are presented. A correlation between RR, electromigration median-time-to-fail (MTTF), and median-grain-radius (MGR) of the metal is shown, using examples of N/sub 2/ and H/sub 2/O contaminated films.<>

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28th Annual Proceedings on Reliability Physics Symposium

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