一种采用源侧热电子注入的封装控制栅极结构的新型2位/单元MONOS存储器件

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) Pub Date : 2002-06-11 DOI:10.1109/VLSIT.2002.1015454

H. Tomiye, T. Terano, K. Nomoto, T. Kobayashi

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引用次数: 7

摘要

我们提出了一种新颖的2位/单元MONOS存储器结构，其特点是封装门。编程和擦除分别采用源侧热电子注入和热空穴注入。实现了编程速度<1 /spl mu/s，编程电流<2 /spl mu/ a //spl mu/m，擦除速度<10 /spl mu/s。

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A novel 2-bit/cell MONOS memory device with a wrapped-control-gate structure that applies source-side hot-electron injection

We have proposed a novel 2-bit/cell MONOS memory structure that features a wrapped gate. Programming and erasing are by source-side hot-electron injection and hot-hole injection, respectively. With this device, programming speeds <1 /spl mu/s with a programming current <2 /spl mu/A//spl mu/m, and erasing speeds <10 /spl mu/s have been achieved.

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2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

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