80 - 220 GHz应用的工业MHEMT技术

2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI:10.1109/EMICC.2008.4772267

D. Smith, G. Dambrine, J. Orlhac

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引用次数: 15

摘要

本文介绍了栅极长度从130纳米到50纳米的一系列MHEMT技术的工业开发方法。介绍了90 GHz和150 GHz商用70 nm技术的最先进MMIC LNA性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Industrial MHEMT Technologies for 80 - 220 GHz Applications

This paper describes the industrial development methodology of a family of MHEMT technologies with gate lengths from 130 down to 50 nm. State of the art MMIC LNA performance for the commercial 70 nm technology at 90 and 150 GHz is presented.

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2008 European Microwave Integrated Circuit Conference

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