关于BTI和HCD退化模式的老化感知晶体管尺寸工具

2015 22nd International Conference Mixed Design of Integrated Circuits & Systems (MIXDES) Pub Date : 2015-06-25 DOI:10.1109/MIXDES.2015.7208525

Nico Hellwege, N. Heidmann, M. Erstling, D. Peters-Drolshagen, S. Paul

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引用次数: 7

摘要

本文提出了一种基于工具的老化感知设计方法。通过BTI和HCD引起的工作点相关退化来扩展gm/ID尺寸方法，可以实现创新的设计流程。该设计流程在设计时考虑了新电路和退化电路的性能特征。一旦计算出单个晶体管的退化，GMID-Tool就不需要任何进一步的SPICE或老化模拟。设计方法的变化对一个典型的差分放大器结构的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An aging-aware transistor sizing tool regarding BTI and HCD degradation modes

In this paper we present a tool based approach for an aging-aware design method. Extending the gm/ID sizing method by operating point-dependent degradation caused by BTI and HCD enables an innovative design flow. This design flow considers performance characteristics for a fresh circuit and also those of a degraded circuit at design time. Once the degradation from a single transistor is computed, the GMID-Tool does not need any further SPICE or aging simulation. The impact of the change in design methodology is shown for a typical differential amplifier structure.

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2015 22nd International Conference Mixed Design of Integrated Circuits & Systems (MIXDES)

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