M. Matloubian, L. Larson, A. Brown, L. Jelloian, L. Nguyen, M. Lui, T. Liu, J. Brown, M. Thompson, W. Lam, A. Kurdoghlian, R. Rhodes, M. Delaney, J. Pence
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InP-based HEMTs for the realization of ultra-high efficiency millimeter wave power amplifiers
The authors have conducted a systematic effort to improve the breakdown voltage of InP-based HEMTs without compromising their high frequency performance, and have demonstrated millimeter wave circuit results that are comparable to or exceed those of the best GaAs-based PHEMTs in the critical area of power-added efficiency and output power. This improvement was accomplished by a combination of developments in material growth and device design and fabrication.<>
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