GaN DC/DC变换器的死区跟踪算法

2019 International Conference on Applied Electronics (AE) Pub Date : 2019-09-01 DOI:10.23919/AE.2019.8866992

P. Skarolek, J. Lettl

{"title":"GaN DC/DC变换器的死区跟踪算法","authors":"P. Skarolek, J. Lettl","doi":"10.23919/AE.2019.8866992","DOIUrl":null,"url":null,"abstract":"The presented method automatically adjusts the deadtime of gallium nitride (GaN) transistors in half-bridge to increase the efficiency. This removes the need of manual measuring and setting the deadtime of the finished converter. The developed algorithm was tested and compared with the fixed deadtime case. The obtained results show that the developed algorithm is achieving higher and more stable efficiency compared to selected fixed deadtime.","PeriodicalId":177095,"journal":{"name":"2019 International Conference on Applied Electronics (AE)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Tracking Deadtime Algorithm for GaN DC/DC Converter\",\"authors\":\"P. Skarolek, J. Lettl\",\"doi\":\"10.23919/AE.2019.8866992\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The presented method automatically adjusts the deadtime of gallium nitride (GaN) transistors in half-bridge to increase the efficiency. This removes the need of manual measuring and setting the deadtime of the finished converter. The developed algorithm was tested and compared with the fixed deadtime case. The obtained results show that the developed algorithm is achieving higher and more stable efficiency compared to selected fixed deadtime.\",\"PeriodicalId\":177095,\"journal\":{\"name\":\"2019 International Conference on Applied Electronics (AE)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Applied Electronics (AE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/AE.2019.8866992\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Applied Electronics (AE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/AE.2019.8866992","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

该方法可自动调节半桥式氮化镓晶体管的死区时间，从而提高效率。这消除了手动测量和设置完成的转换器的死区时间的需要。对所提出的算法进行了测试，并与固定死区情况进行了比较。实验结果表明，与选定的固定死区相比，所提出的算法具有更高、更稳定的效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Tracking Deadtime Algorithm for GaN DC/DC Converter

The presented method automatically adjusts the deadtime of gallium nitride (GaN) transistors in half-bridge to increase the efficiency. This removes the need of manual measuring and setting the deadtime of the finished converter. The developed algorithm was tested and compared with the fixed deadtime case. The obtained results show that the developed algorithm is achieving higher and more stable efficiency compared to selected fixed deadtime.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 International Conference on Applied Electronics (AE)

自引率

0.00%

发文量