HgCdTe外延薄膜v型缺陷区材料成分局部分布

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI:10.1109/ICIPRM.2016.7528604

V. Novikov, D. Grigoryev, D. Bezrodnyy, S. Dvoretsky, M. Yakushev

{"title":"HgCdTe外延薄膜v型缺陷区材料成分局部分布","authors":"V. Novikov, D. Grigoryev, D. Bezrodnyy, S. Dvoretsky, M. Yakushev","doi":"10.1109/ICIPRM.2016.7528604","DOIUrl":null,"url":null,"abstract":"In this paper the local distribution of the material composition in the V-defect region of HgCdTe epitaxial films is investigated. The local composition distribution is studied by the Kelvin Force Probe Microscopy method and scanning electron microscopy with energy dispersive X-ray analysis. It is demonstrated that in the V-defect region of a Hg1-xCdxTe epitaxial film inhomogeneous distribution of the material component composition is observed. Analysis of the obtained experimental data shows that V-defects are distinguished by an increased mercury content.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"46 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Local distribution of the material composition in the V-defect region of HgCdTe epitaxial films\",\"authors\":\"V. Novikov, D. Grigoryev, D. Bezrodnyy, S. Dvoretsky, M. Yakushev\",\"doi\":\"10.1109/ICIPRM.2016.7528604\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the local distribution of the material composition in the V-defect region of HgCdTe epitaxial films is investigated. The local composition distribution is studied by the Kelvin Force Probe Microscopy method and scanning electron microscopy with energy dispersive X-ray analysis. It is demonstrated that in the V-defect region of a Hg1-xCdxTe epitaxial film inhomogeneous distribution of the material component composition is observed. Analysis of the obtained experimental data shows that V-defects are distinguished by an increased mercury content.\",\"PeriodicalId\":357009,\"journal\":{\"name\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"volume\":\"46 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2016.7528604\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2016.7528604","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文研究了HgCdTe外延薄膜v型缺陷区材料成分的局部分布。用开尔文力探针显微镜和扫描电镜结合能量色散x射线分析研究了局部成分的分布。结果表明，在Hg1-xCdxTe外延膜的v缺陷区，材料成分的分布不均匀。对实验数据的分析表明，v型缺陷的特征是汞含量的增加。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Local distribution of the material composition in the V-defect region of HgCdTe epitaxial films

In this paper the local distribution of the material composition in the V-defect region of HgCdTe epitaxial films is investigated. The local composition distribution is studied by the Kelvin Force Probe Microscopy method and scanning electron microscopy with energy dispersive X-ray analysis. It is demonstrated that in the V-defect region of a Hg1-xCdxTe epitaxial film inhomogeneous distribution of the material component composition is observed. Analysis of the obtained experimental data shows that V-defects are distinguished by an increased mercury content.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

自引率

0.00%

发文量