具有片上自适应参考缓冲器的高速全自定时SAR ADC

Yifei Zhao, Mao Ye, Man Gao, Yiqiang Zhao
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引用次数: 0

摘要

本文介绍了一种12位100Ms/s全自定时SAR ADC。为了实现子adc的自定时,还引入了一个定时器电路。采用冗余和单调开关技术,进一步提高了转换速度。在芯片上包括一个基于高速参考缓冲器的源从动器。为了在不同PVT条件下自适应调节驱动强度,设计了偏置电流调节反馈回路。本文提出的SAR ADC采用55nm CMOS工艺设计,有源核心电路面积为560μm*320μm。仿真结果表明,该方法可实现75.2dB的信噪比、70.7dB的信噪比和69dB的信噪比。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A high speed fully self-timed SAR ADC with an on-chip adaptative reference buffer
This paper presents a 12bit 100Ms/s fully-self timed SAR ADC. A timer circuit is introduced in order to self-time the sub-ADC settlement. Redundancy and monotonic switching techniques are adopted to further enhance the conversion speed. A source follower based high speed reference buffer is included on the chip. To adaptively adjust the drive strength under different PVT condition, a bias current adjustment feedback loop is designed. The proposed SAR ADC is designed with 55nm CMOS process, the active core circuit occupies an area of 560μm*320μm. The simulated result indicates that 75.2dB SFDR, 70.7dB SNR, 69dB SNDR are achieved.
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