{"title":"具有片上自适应参考缓冲器的高速全自定时SAR ADC","authors":"Yifei Zhao, Mao Ye, Man Gao, Yiqiang Zhao","doi":"10.1109/EDSSC.2019.8753967","DOIUrl":null,"url":null,"abstract":"This paper presents a 12bit 100Ms/s fully-self timed SAR ADC. A timer circuit is introduced in order to self-time the sub-ADC settlement. Redundancy and monotonic switching techniques are adopted to further enhance the conversion speed. A source follower based high speed reference buffer is included on the chip. To adaptively adjust the drive strength under different PVT condition, a bias current adjustment feedback loop is designed. The proposed SAR ADC is designed with 55nm CMOS process, the active core circuit occupies an area of 560μm*320μm. The simulated result indicates that 75.2dB SFDR, 70.7dB SNR, 69dB SNDR are achieved.","PeriodicalId":183887,"journal":{"name":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A high speed fully self-timed SAR ADC with an on-chip adaptative reference buffer\",\"authors\":\"Yifei Zhao, Mao Ye, Man Gao, Yiqiang Zhao\",\"doi\":\"10.1109/EDSSC.2019.8753967\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 12bit 100Ms/s fully-self timed SAR ADC. A timer circuit is introduced in order to self-time the sub-ADC settlement. Redundancy and monotonic switching techniques are adopted to further enhance the conversion speed. A source follower based high speed reference buffer is included on the chip. To adaptively adjust the drive strength under different PVT condition, a bias current adjustment feedback loop is designed. The proposed SAR ADC is designed with 55nm CMOS process, the active core circuit occupies an area of 560μm*320μm. The simulated result indicates that 75.2dB SFDR, 70.7dB SNR, 69dB SNDR are achieved.\",\"PeriodicalId\":183887,\"journal\":{\"name\":\"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"volume\":\"92 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2019.8753967\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2019.8753967","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high speed fully self-timed SAR ADC with an on-chip adaptative reference buffer
This paper presents a 12bit 100Ms/s fully-self timed SAR ADC. A timer circuit is introduced in order to self-time the sub-ADC settlement. Redundancy and monotonic switching techniques are adopted to further enhance the conversion speed. A source follower based high speed reference buffer is included on the chip. To adaptively adjust the drive strength under different PVT condition, a bias current adjustment feedback loop is designed. The proposed SAR ADC is designed with 55nm CMOS process, the active core circuit occupies an area of 560μm*320μm. The simulated result indicates that 75.2dB SFDR, 70.7dB SNR, 69dB SNDR are achieved.