内置自检闪存嵌入在SoC

Shibaji Banerjee, D. R. Chowdhury
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引用次数: 4

摘要

闪存是一种非易失性存储器,在片上系统中越来越受欢迎。但是,闪存受到不同类型的干扰故障的影响。本文提出了快闪存储器中可能出现的一些新的干扰故障。提出了一种改进的March算法来检测这些故障。最后,对嵌入式存储器进行了基于嵌入式处理器的内置自检(BIST)设计。该方法利用了SoC环境下处理器复用的概念。通过重用嵌入式处理器,可以在很大程度上减少由BIST引起的面积开销。面积开销只是由于设计存储封装单元所需的电路。实验结果表明,对于典型的256K闪存,由于BIST造成的面积开销小于1%
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Built-in self-test for flash memory embedded in SoC
Flash memories are a type of nonvolatile memory, which are becoming more and more popular for system-on-chip. But, flash memories are suffered by different types of disturb faults. In the present paper, some new disturb faults that may appear in flash memory are proposed. A modifies March algorithm is developed to detect these faults. Finally, an embedded processor-based built-in self-test (BIST) design is implemented for embedded memories. The proposed method utilizes the concept of reusing the processor in SoC environment. By reusing the embedded processor, the area overhead due to BIST can be reduced to a great extent. The area overhead is only due to the circuits required to design memory wrapper cell. The experimental results show that the area overhead due to BIST is less than 1% for a typical 256K flash memory
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