非磁性掺杂(Zn,Mn) O稀磁性半导体的磁输运性质

INTERMAG 2006 - IEEE International Magnetics Conference Pub Date : 2006-05-08 DOI:10.1109/INTMAG.2006.375638

K. Ghosh, G. Mundada, S. Manchiraju, T. Kehl, C. Vera, R.J. Patel, D. Ishiaho, S. R. Mishra, P. Kahol

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摘要

本文报道了非磁性元素(Al和Cu)掺杂对Zn0.85Mn0.15O (ZnMnO)稀磁性半导体结构和磁输运性能的影响。采用XRD、拉曼光谱、AFM和SEM对其结构进行了表征。温度相关的电阻率，霍尔效应，并使用标准的磁输运装置进行。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Magneto-Transport Properties of Nonmagnetic Doped (Zn,Mn) O Dilute Magnetic Semiconductor

In this paper, nonmagnetic elements (Al and Cu) doping effect on the structural and magneto-transport properties of Zn0.85Mn0.15O (ZnMnO) dilute magnetic semiconductors were reported. The structural characterization was performed using XRD, Raman spectroscopy, AFM and SEM. Temperature dependent electrical resistivity, Hall effect, and were carried out using a standard magneto-transport set-up.

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INTERMAG 2006 - IEEE International Magnetics Conference

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