硅-铁二次再结晶模型及与实验的比较

Texture, Stress, and Microstructure Pub Date : 1900-01-01 DOI:10.1155/TSM.14-18.775

G. Abbruzzese, A. Campopiano, S. Fortunati

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引用次数: 5

摘要

对晶粒取向硅铁片不同层间的选择性晶粒生长过程进行了比较分析。在距薄片表面40 μm处，二次再结晶的培养时间较短，取向选择最佳。这与质地中存在相对较强的//RD纤维有关。通过薄板厚度的差异被认为是继承自热带。在谷物生长统计理论框架下的计算机模拟支持了所提出的选择机制。

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Model of Secondary Recrystallization in Silicon-Iron and Comparison With Experiments

A comparative analysis has been made of selective grain growth processes at different layers of a grain oriented silicon iron sheet. Shorter incubation time and best orientation selection during secondary recrystallization appear at 40 μm from the sheet surface. This has been linked to the presence of a relatively strong //RD fiber in the texture. The differences through the sheet thickness are assumed to be inherited from the hot band. Computer simulations in the framework of the statistical theory of grain growth support the proposed selection mechanisms.

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Texture, Stress, and Microstructure

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