InGaAsP/InGaAs/InP和InAlGaAs/InGaAs/InP量子阱中质子和砷注入诱导混合的比较

2008 International Conference on Nanoscience and Nanotechnology Pub Date : 2008-10-07 DOI:10.1109/ICONN.2008.4639238

S. Du, L. Fu, H. Tan, C. Jagadish

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引用次数: 0

摘要

在本工作中，我们研究了在InGaAsP/InGaAs和InAlGaAs/InGaAs量子阱中质子和砷离子注入诱导的混合。对不同注入条件下缺陷的形成和演化过程进行了比较和讨论。

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Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells

In this work, we studied the proton and arsenic ion implantation-induced intermixing in InGaAsP/InGaAs and InAlGaAs/InGaAs quantum wells. The results were compared and discussed based on the defect formation and evolution process under the different implantation conditions and QW barrier materials.

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2008 International Conference on Nanoscience and Nanotechnology

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