Device Characterization of Thermally Evaporated CdS/CdZnTe Thin Films for Solar Cell Applications

The aim of this study is to characterize CdS and CdZnTe thin films with different thicknesses for solar cell applications. Polycrystalline CdS-CdZnTe thin films are prepared by the thermal evaporation method to optimize the thickness of the CdS and CdZnTe layers, which is a critical factor affecting device performance. Three different CdS thicknesses of 100 nm, 120 nm, and 150 nm have been studied. Additionally, the thickness of the CdZnTe layers is reduced to an extreme limit to conserve material usage. Accordingly, CdZnTe thicknesses of 800 nm and 1500 nm have been deposited on 120 nm CdS thin films. The effect of CdS and CdZnTe thicknesses on structural, optical, and electrical properties is analyzed using X-ray diffraction (XRD), transmittance, and Hall effect measurements. In addition, ITO/CdS/CdZnTe/Au devices with varying CdS and CdZnTe thicknesses are characterized by current-voltage measurements under dark and illuminated conditions.