中压三相SiC固态变压器拓扑选择

H. Sepahvand, S. Madhusoodhanan, K. Corzine, S. Bhattacharya, M. Ferdowsi
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引用次数: 8

摘要

三相固态变压器(SST)结构的第一级是中压有源整流器。由于其相对较高的电压工作条件,该整流器需要仔细的拓扑选择经验实施。本文研究了不同拓扑结构的有源整流器作为SSTs第一阶段的候选器件。选择的拓扑被缩小到三个最合适的拓扑。三种选择的拓扑结构是电流源降压整流器、二极管箝位整流器和串联有源滤波器。为了比较,本文采用仿真和实验的方法对这三种整流器的损耗进行了分析。在本研究中,为了实用性和简单性,使用10 kV碳化硅(SiC) mosfet和二极管来减少整流器多电平结构中的元件数量。除了损耗分析外,本文还提出了一种串联有源滤波器的电容电压调节新方法,并进行了实验验证。考虑到损耗数据和线路电流总谐波失真(THD)等问题,得出串联有源滤波器拓扑最适合该应用的结论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Topology selection for medium-voltage three-phase SiC solid-state transformer
The first stage in the structure of a three-phase solid state transformer (SST) is a medium voltage active rectifier. Due to its relatively high voltage operating conditions, this rectifier requires careful topology selection for empirical implementation. In this paper, different topologies of active rectifiers are studied as candidates for the first stage in SSTs. The selected topologies are narrowed down to three most suitable topologies. Three selected topologies are the current source buck rectifier, the diode-clamped rectifier, and the series active filter. For comparison purposes, loss analysis of these three rectifiers is carried out using simulations and experimental implementation. In this study, for the sake of practicality and simplicity, 10 kV Silicon Carbide (SiC) MOSFETs and diodes are utilized to reduce the number of components in the multilevel structure of the rectifiers. Other than loss analysis, a new technique for capacitor voltage regulation for the series active filter topology is also proposed and experimentally verified. Considering the loss data and other issues such as line current total harmonic distortion (THD), it is concluded that the series active filter topology is the most suitable one for this application.
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