多波激光干涉测量基本辐射源系统的构建

Y. Machekhin, A. Shelekhov
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引用次数: 0

摘要

激光经过多年的发展,取得了很大的成功,但从过去的发展趋势来看,存在着向新的现代元件基过渡的现实问题。气体激光器具有良好的特性,但体积大、功率大,因此,将气体激光器替换成半导体激光器的问题已经十分现实。西方研究人员已经进行了大量的实验,并建立了碘在从500纳米到1300纳米的波长范围内的成对吸收谱线。从这个文件的吸收线,我们感兴趣的三条吸收线在502纳米,633纳米,793纳米,这将允许阻挡所有的可见范围。有一个问题,创造稳定的半导体激光源与高特性,重叠上述波长的波长。频率稳定的半导体激光器的发明为干涉测量提供了充足的机会。在报告中讨论了使用连续发射半导体激光器的机会,在创建时稳定在激光的碘吸收超细线上。在报告中,它被作为502纳米、633纳米、793纳米的辐射线的波长(或辐射源)的基本系统提出并被论证使用。在报告中讨论了已制定的长度(频率)标准的计量维护问题
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Construction of Fundamental System of Sources of Radiation for Multiwave Laser Interferometry
The laser for years of the development has reached big successes, but in view of last tendencies there is a real problem of transition to new modern element base. Gas lasers have good characteristics, but they rather bulky and power-intensive, therefore the problem of replacement of gas lasers semi-conductor lasers is very actual now. The western researchers have already a number of experiments and have established lines of absorption in pairs iodine in a range of lengths of waves from 500 nanometers up to 1300 nanometers. From this file of lines of absorption of us interest three lines of absorption on 502 nanometers, 633 nanometers, 793 nanometers which will allow to block all seen range. There is a problem of creation of the stabilized semi-conductor laser source with the high characteristics, overlapping the above-stated lengths of waves. Creation of the semi-conductor lasers stabilized on frequency opens ample opportunities in measuring interferometry. In the report the opportunity of use of serially let out semi-conductor lasers is discussed, at creation stabilized on superthin lines of absorption in iodine of lasers. In the report it is offered and use is argued as fundamental system of lengths of waves (or sources of radiation) lines of radiation of 502 nanometers, 633 nanometers, 793 nanometers. In the report questions of metrological maintenance of developed standards of length (frequency) are discussed
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