基于脉冲热电子注入的浮栅MOS电荷编程

2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE) Pub Date : 2013-12-02 DOI:10.1109/ICEEE.2013.6676050

José Luis Ochoa-Padilla, F. Gómez-Castañeda, J. Moreno-Cadenas

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引用次数: 3

摘要

浮栅MOSFET是一种在模拟电路设计中有着广泛应用的器件。其特性的一个缺点是与浮栅相关的寄生电荷，通常在制造后出现。根据应用程序的不同，需要删除或修改此收费。本文介绍了一种利用福勒-诺德海姆隧道和脉冲热电子注入来清除或修正浮栅电荷的算法和原型系统。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Floating-Gate MOS charge programming using pulsed hot-electron injection

The Floating-Gate MOSFET is a device which has many applications in the design of analog circuits. One drawback of its properties is the parasitic charge associated with its floating gate, usually present after the fabrication. Depending on the application, this charge needs to be removed or modified. This paper describes an algorithm and a prototype system which uses Fowler-Nordheim Tunneling and Hot-Electron Injection in a pulsed fashion in order to clear or modify the floating-gate charge.

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2013 10th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)

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