GaAs pHMET MMIC中的宽带真时延

Dongning Hao, Wei Zhang
{"title":"GaAs pHMET MMIC中的宽带真时延","authors":"Dongning Hao, Wei Zhang","doi":"10.1109/ICCS51219.2020.9336602","DOIUrl":null,"url":null,"abstract":"A controllable wideband true time delay based on 0.25 µm GaAs pHMET technology is proposed. The circuit adopts the modified trombone topology to reduce the variation of the insertion loss. Fourth-order and second-order all-pass networks (APN) are applied to the gate and drain respectively to form the step of 12ps delay. The 3-bit control voltage achieves the maximum delay range of 83ps, with the variation of insertion loss less than ±0.8dB. The operation frequency bandwidth is 8-18GHz, and the die area is 1.08mm2 with 110mW consumption.","PeriodicalId":193552,"journal":{"name":"2020 IEEE 2nd International Conference on Circuits and Systems (ICCS)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Wideband True Time Delay in GaAs pHMET MMIC\",\"authors\":\"Dongning Hao, Wei Zhang\",\"doi\":\"10.1109/ICCS51219.2020.9336602\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A controllable wideband true time delay based on 0.25 µm GaAs pHMET technology is proposed. The circuit adopts the modified trombone topology to reduce the variation of the insertion loss. Fourth-order and second-order all-pass networks (APN) are applied to the gate and drain respectively to form the step of 12ps delay. The 3-bit control voltage achieves the maximum delay range of 83ps, with the variation of insertion loss less than ±0.8dB. The operation frequency bandwidth is 8-18GHz, and the die area is 1.08mm2 with 110mW consumption.\",\"PeriodicalId\":193552,\"journal\":{\"name\":\"2020 IEEE 2nd International Conference on Circuits and Systems (ICCS)\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE 2nd International Conference on Circuits and Systems (ICCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCS51219.2020.9336602\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 2nd International Conference on Circuits and Systems (ICCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCS51219.2020.9336602","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

提出了一种基于0.25µm GaAs pHMET技术的可控宽带真时延。电路采用改进的长号拓扑结构,减小了插入损耗的变化。栅极和漏极分别采用四阶和二阶全通网络(APN),形成12ps延时阶跃。3位控制电压达到83ps的最大延时范围,插入损耗变化小于±0.8dB。工作频率带宽8-18GHz,芯片面积1.08mm2,功耗110mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Wideband True Time Delay in GaAs pHMET MMIC
A controllable wideband true time delay based on 0.25 µm GaAs pHMET technology is proposed. The circuit adopts the modified trombone topology to reduce the variation of the insertion loss. Fourth-order and second-order all-pass networks (APN) are applied to the gate and drain respectively to form the step of 12ps delay. The 3-bit control voltage achieves the maximum delay range of 83ps, with the variation of insertion loss less than ±0.8dB. The operation frequency bandwidth is 8-18GHz, and the die area is 1.08mm2 with 110mW consumption.
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