高中子通量对InAs量子点结构电学特性的影响

2013 IEEE 4th International Conference on Photonics (ICP) Pub Date : 2013-10-30 DOI:10.1109/ICP.2013.6687122

D. A. Fauzi, Nahrul Khair Alang, M. Rashid, N. I. C. Omar, N. Hasbullah, M. R. M. Zin

{"title":"高中子通量对InAs量子点结构电学特性的影响","authors":"D. A. Fauzi, Nahrul Khair Alang, M. Rashid, N. I. C. Omar, N. Hasbullah, M. R. M. Zin","doi":"10.1109/ICP.2013.6687122","DOIUrl":null,"url":null,"abstract":"The use of InAs quantum dots (QDs) in a well (DWELL) structure as a medium to minimize propagation of neutron induced defects is presented. The DWELL samples and GaAs based commercial diodes were radiated with thermal neutron under maximum fluence of 1.4×l016 neutron/cm2. Based on the current-voltage (I-V) characteristics, it was discovered that the forward bias (FB) leakage current for both devices decreased as an effect of increment in series resistance. In reverse bias (RB), there is significant decrement in leakage current of DWELL samples in the order of 2 orders of magnitude. The RB leakage current of GaAs diode showed similar response as in FB. However, the QD based structures showed less defects compared to the GaAs based diodes.","PeriodicalId":308672,"journal":{"name":"2013 IEEE 4th International Conference on Photonics (ICP)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures\",\"authors\":\"D. A. Fauzi, Nahrul Khair Alang, M. Rashid, N. I. C. Omar, N. Hasbullah, M. R. M. Zin\",\"doi\":\"10.1109/ICP.2013.6687122\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The use of InAs quantum dots (QDs) in a well (DWELL) structure as a medium to minimize propagation of neutron induced defects is presented. The DWELL samples and GaAs based commercial diodes were radiated with thermal neutron under maximum fluence of 1.4×l016 neutron/cm2. Based on the current-voltage (I-V) characteristics, it was discovered that the forward bias (FB) leakage current for both devices decreased as an effect of increment in series resistance. In reverse bias (RB), there is significant decrement in leakage current of DWELL samples in the order of 2 orders of magnitude. The RB leakage current of GaAs diode showed similar response as in FB. However, the QD based structures showed less defects compared to the GaAs based diodes.\",\"PeriodicalId\":308672,\"journal\":{\"name\":\"2013 IEEE 4th International Conference on Photonics (ICP)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 4th International Conference on Photonics (ICP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICP.2013.6687122\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 4th International Conference on Photonics (ICP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICP.2013.6687122","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了在阱(DWELL)结构中使用InAs量子点(QDs)作为介质来减少中子诱导缺陷的传播。在1.4×l016 neutron/cm2的最大通量下，对DWELL样品和GaAs基商用二极管进行热中子辐射。基于电流-电压(I-V)特性，发现两个器件的正偏置(FB)漏电流随着串联电阻的增加而减小。在反向偏置(RB)下，DWELL样品的漏电流有2个数量级的显著下降。GaAs二极管RB泄漏电流的响应与FB相似。然而，与基于砷化镓的二极管相比，基于QD的结构显示出较少的缺陷。

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Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures

The use of InAs quantum dots (QDs) in a well (DWELL) structure as a medium to minimize propagation of neutron induced defects is presented. The DWELL samples and GaAs based commercial diodes were radiated with thermal neutron under maximum fluence of 1.4×l016 neutron/cm2. Based on the current-voltage (I-V) characteristics, it was discovered that the forward bias (FB) leakage current for both devices decreased as an effect of increment in series resistance. In reverse bias (RB), there is significant decrement in leakage current of DWELL samples in the order of 2 orders of magnitude. The RB leakage current of GaAs diode showed similar response as in FB. However, the QD based structures showed less defects compared to the GaAs based diodes.

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2013 IEEE 4th International Conference on Photonics (ICP)

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