{"title":"基于半导体单壁碳纳米管阵列/硅异质结的倍他伏打微电池","authors":"M. Li, J. Zhang","doi":"10.1109/MEMSYS.2015.7051156","DOIUrl":null,"url":null,"abstract":"In this paper, a novel betavoltaic (BV) microcell based on semiconducting single-walled carbon nanotube (s-SWCNT) arrays/Si heterojunctions are demonstrated for the first time. The aligned arrays of p-type s-SWCNTs were prepared on n-type silicon to form the p-n heterojunctions as energy conversion by the traditional micro-fabrication process and dielectrophoretic (DEP) technology. The s-SWCNT arrays/Si p-n heterojunction displays better rectification characteristics than the SWCNT-based Schottky junctions such as Au/s-SWCNT/Ti and SWCNTs thin film/Si in our previous works. Under 7.8mCi/cm2 63Ni irradiation, the open circuit voltage (VOC) of 62mV, short current density (JSC) of 3.8μA/cm2, fill factor (FF) of 33.4% and energy conversion efficiency (η) of 9.8% were achieved. The results indicated that this s-SWCNT arrays/Si microcell has a huge potential for application in BV microcells.","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A betavoltaic microcell based on semiconducting single-walled carbon nanotube arrays/Si heterojunctions\",\"authors\":\"M. Li, J. Zhang\",\"doi\":\"10.1109/MEMSYS.2015.7051156\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a novel betavoltaic (BV) microcell based on semiconducting single-walled carbon nanotube (s-SWCNT) arrays/Si heterojunctions are demonstrated for the first time. The aligned arrays of p-type s-SWCNTs were prepared on n-type silicon to form the p-n heterojunctions as energy conversion by the traditional micro-fabrication process and dielectrophoretic (DEP) technology. The s-SWCNT arrays/Si p-n heterojunction displays better rectification characteristics than the SWCNT-based Schottky junctions such as Au/s-SWCNT/Ti and SWCNTs thin film/Si in our previous works. Under 7.8mCi/cm2 63Ni irradiation, the open circuit voltage (VOC) of 62mV, short current density (JSC) of 3.8μA/cm2, fill factor (FF) of 33.4% and energy conversion efficiency (η) of 9.8% were achieved. The results indicated that this s-SWCNT arrays/Si microcell has a huge potential for application in BV microcells.\",\"PeriodicalId\":337894,\"journal\":{\"name\":\"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-03-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.2015.7051156\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2015.7051156","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A betavoltaic microcell based on semiconducting single-walled carbon nanotube arrays/Si heterojunctions
In this paper, a novel betavoltaic (BV) microcell based on semiconducting single-walled carbon nanotube (s-SWCNT) arrays/Si heterojunctions are demonstrated for the first time. The aligned arrays of p-type s-SWCNTs were prepared on n-type silicon to form the p-n heterojunctions as energy conversion by the traditional micro-fabrication process and dielectrophoretic (DEP) technology. The s-SWCNT arrays/Si p-n heterojunction displays better rectification characteristics than the SWCNT-based Schottky junctions such as Au/s-SWCNT/Ti and SWCNTs thin film/Si in our previous works. Under 7.8mCi/cm2 63Ni irradiation, the open circuit voltage (VOC) of 62mV, short current density (JSC) of 3.8μA/cm2, fill factor (FF) of 33.4% and energy conversion efficiency (η) of 9.8% were achieved. The results indicated that this s-SWCNT arrays/Si microcell has a huge potential for application in BV microcells.