采用InGaP/GaAs HBT技术的高输出功率宽带MMIC混频器

Won-Jun Choi, Young-Ho Lee, Nam-Young Kim
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引用次数: 0

摘要

本文设计了一种具有高输出功率的InGaP/GaAs HBT宽带MMIC混频器,其总芯片面积为1.3 x 1.0 mm2。在400 MHz至8 GHz的宽带频率范围内,下变频混频器显示回波损耗为-10 dB,转换增益为+2.6 dB。它还显示三阶输入截距点(IIP3)为+ 16.78 dBm,三阶输出截距点(OIP3)为+19.38 dBm,输出参考的1 db压缩点(PldB,out)为+10 dBm。LO-RF漏量为-84dBm, LO-IF漏量为- 60dbm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Broadband MMIC Mixer with high output power using InGaP/GaAs HBT technology
In this paper, an InGaP/GaAs HBT Broadband MMIC Mixer with high output power is designed within a total chip area of 1.3 x 1.0 mm2. The down-conversion mixer shows return loss of -10 dB and a conversion gain of +2.6 dB in the broadband frequency range of 400 MHz to 8 GHz. It also shows a third-order input intercept point (IIP3) of+ 16.78 dBm, a third-order output intercept point (OIP3) of +19.38 dBm, and an output-referred 1-dB compression point (PldB,out) of+10 dBm. The LO-RF leakage is -84dBm and LO-IF is -60 dBm, respectively.
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