利用表面等离子体耦合提高紫外LED的发射效率

2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI:10.1109/PHOSST.2015.7248170

Chun-Han Lin, Yang Kuo, C. Hsieh, C. Su, S. Sun, Wei-Han Chen, Yi-An Chen, Erwin Zhu, Meng‐Che Tsai, M. Su, Chu-An Huang, Y. Kiang, C. C. Yang

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引用次数: 0

摘要

在紫外LED的p-GaN层或p-AlGaN层上设计和制造铝纳米结构，以诱导表面等离子体耦合，提高发射效率，减少p-GaN吸收，并最大限度地减少tm极化发射。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Using surface plasmon coupling for enhancing the emission efficiency of UV LED

Aluminum nanostructures on the p-GaN layer or in the p-AlGaN layer of a UV LED are designed and fabricated to induce surface plasmon coupling for enhancing emission efficiency, reducing p-GaN absorption, and minimizing TM-polarized emission.

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2015 IEEE Summer Topicals Meeting Series (SUM)

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