采用ams0.35 μm SiGe BiCMOS技术的IEEE 802.11a WLAN 5 GHz功率放大器设计

2006 IEEE 14th Signal Processing and Communications Applications Pub Date : 2006-04-17 DOI:10.1109/SIU.2006.1659888

C. Kavlak, I. Tekin

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引用次数: 0

摘要

在这项工作中，采用奥地利微系统公司(AMS) 0.35 μ SiGe BiCMOS (ft=60 GHz)技术设计了一款适用于802.11a无线局域网应用的5 GHz射频功率放大器。在5 GHz频率和3.3 V电源电压下，单分立SiGe BiCMOS HBT (npn 254H5)的发射极宽度为0.35 m，输出功率为16.364 dBm，功率附加效率(PAE)为36.819%。3.3 V时输出1db压缩点为11.86 dBm, PAE为21%

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5 GHz Power Amplifier Design with AMS 0.35 μm SiGe BiCMOS Technology for IEEE 802.11a WLAN

In this work, a 5 GHz radio frequency power amplifier for 802.11a wireless LAN applications has been designed in Austria Micro Systems (AMS) 0.35 mum SiGe BiCMOS (ft=60 GHz) technology. At 5 GHz frequency and 3.3 V supply voltage, output power of 16.364 dBm and power added efficiency (PAE) of 36.819 % are achieved from single discrete SiGe BiCMOS HBT (npn 254H5) with 0.35 mum emitter width. The output 1 dB compression point at 3.3 V is 11.86 dBm with a PAE of 21%

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2006 IEEE 14th Signal Processing and Communications Applications

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