GMI传感器由DDS驱动

M. Zidi, A. Asfour, J. Yonnet
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引用次数: 1

摘要

介绍了一种基于直接数字合成器(DDS)的巨磁阻抗(GMI)传感器的设计和性能。由于GMI特性在很大程度上取决于高频源参数,DDS作为一种高度稳定的频率源,可能有利于GMI传感器。DDS技术允许以高精度对波形参数进行数字和动态编程,从而可以轻松优化传感器响应。传感元件是一种非晶(Co-Fe-Si-B)导线,由DDS及其电压-电流转换器提供的高频电流驱动。为了测量传感元件上的电压变化,使用了峰值检测器和带有调零功能的高增益放大器。在感应导线上施加直流偏置磁场以获得不对称的GMI效应。该传感器灵敏度为0.26 V/ a /m,在±25 a /m的动态范围内具有良好的线性度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
GMI sensor driven by DDS
The design and performances of a Giant Magneto-Impedance (GMI) sensor utilizing a Direct Digital Synthesizer (DDS) is presented. Since the GMI characteristics depend largely on the high frequency source parameters, the DDS, as a highly stable frequency source, could be advantageous for GMI sensors. The DDS technology allows digitally and dynamically programming of the waveform parameters with high accuracy which allows easily optimizing the sensor response. The sensing element is an amorphous (Co-Fe-Si-B) wire driven by a high frequency current delivered by the DDS and its voltage-to-current converter. To measure the voltage variation across the sensing element, a peak detector and a high gain amplifier with zero adjust are used. A DC bias magnetic field is applied to the sensing wire to get an asymmetric GMI effect. The sensor presents a sensitivity of 0.26 V/A/m and good linearity in a dynamic range of ± 25 A/m.
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